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 Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
FEATURES
* Low forward volt drop * Fast switching * Reverse surge capability * High thermal cycling performance * Low thermal resistance
PBYR645CT series
SYMBOL
QUICK REFERENCE DATA VR = 35 V/ 40 V/ 45 V IO(AV) = 10 A VF 0.6V SOT82
DESCRIPTION
a1 1 k2
a2 3
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR645CT series is supplied in the conventional leaded SOT82 package.
PINNING
PIN 1 2 3 tab anode 1 cathode anode 2 cathode
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current diode Peak repetitive reverse surge current per diode Operating junction temperature Storage temperature CONDITIONS PBYR6 Tmb 100 C square wave; = 0.5; Tmb 119 C square wave; = 0.5; Tmb 119 C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. MAX. 35CT 40CT 45CT 35 40 45 35 35 40 40 10 10 75 82 1 150 150 45 45 UNIT V V V A A A A A C C
IRRM Tj Tstg
THERMAL RESISTANCES
SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes in free air MIN. TYP. MAX. UNIT 100 5 4 K/W K/W K/W
May 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
ELECTRICAL CHARACTERISTICS
Tj = 25 C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 5 A; Tj = 125C IF = 10 A VR = VRWM VR = VRWM; Tj = 100C VR = 5 V; f = 1 MHz, Tj = 25C to 125C
PBYR645CT series
MIN. -
TYP. MAX. UNIT 0.51 0.72 0.12 10 150 0.6 0.87 0.5 15 V V mA mA pF
May 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
PBYR645CT series
6 5 4
Forward dissipation, PF (W) Vo = 0.438 V Rs = 0.033 Ohms
PBYR645CT
Tmb(max) / C D = 1.0
120 125
100
Reverse current, IR (mA)
PBYR645CT
0.5 0.2 0.1
I tp D= tp T t
10
130 135 140
125 C 100 C
3 2 1
1
75 C 50 C Tj = 25 C
0.1
145
T
0
0
1
2 3 4 5 6 Average forward current, IF(AV) (A)
7
150 8
0.01
0
25 Reverse voltage, VR (V)
50
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj
5 4
Forward dissipation, PF (W) Vo = 0.438 V Rs = 0.033 Ohms
PBYR645CT
Tmb(max) / C
125 130
Cd / pF 1000
PBYR645CT
a = 1.57 2.2 1.9 2.8 4
3 2 1 0
135
100
140 145
0
1 2 3 4 Average forward current, IF(AV) (A)
150 5
10
1
10 VR / V
100
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
BYV118
Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25C to 125 C.
20
Forward current, IF (A) Tj = 25 C Tj = 125 C
10
Transient thermal impedance, Zth j-mb (K/W)
15
1
typ 10 max 5
0.1
P D tp D= tp T t
T
0
0.01
0
0.2
0.4 0.6 0.8 1 Forward voltage, VF (V)
1.2
1.4
1us
10us
100us
1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR645CT
Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; per diode; Zth j-mb = f(tp).
May 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
MECHANICAL DATA
Dimensions in mm Net Mass: 0.8 g
PBYR645CT series
mounting base
2.8 2.3
7.8 max
3.75 3.1 2.5 11.1 max
1) 2.54 max
1.2 15.3 min
1 4.58 0.5
2
3 2.29
1) Lead dimensions within this zone uncontrolled.
0.88 max
Fig.7. SOT82; pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT82 envelopes. 2. Epoxy meets UL94 V0 at 1/8".
May 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes Schottky barrier
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
PBYR645CT series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
May 1998
5
Rev 1.200


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